Canadian Journal of Physics · 1967 · 27 citations · 8 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsAlloysElectronic Band StructureElectronic Material CharacterizationElectronic Structure Of SolidsOptical Properties Of SemiconductorsSemiconductor PhysicsAlloy Composition EffectsAlloy SemiconductorsElectronic Band TheoryElectronic Density Of StatesPhotonic Band StructureReflectanceSemiconductor CharacterizationSemiconductor Electro-optic Effects
The electrorellectance of GaAs, InAs, and the Ga x In 1−x As alloys has been measured between 2 and 6 eV at room temperature. The E 1 , E 0 ′, and E 2 transitions and their associated split-off and oscillatory components have been observed, and their behavior as a function of alloy composition is presented. A more detailed account of the band structure of the compounds and their alloys than was obtained by earlier reflectance results is given.
8
Band-Structure Analysis from Electro-Reflectance Studies
B. O. Seraphin, N. Bottka · Physical Review · 1966 · 359 citations
Thermal and Electrical Transport in InAs-GaAs Alloys
E. F. Hockings, I. Kudman, Thomas E. Seidel et al. · Journal of Applied Physics · 1966 · 83 citations