Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window

Abstract

Ferroelectric vertical gate-all-around field-effect-transistor (Fe-VGAAFET) suits a memory cell with a 5 nm technology node and beyond since it is less constrained by gate length, thereby providing sufficient space for the ferroelectric film compared with ferroelectric FinFET (Fe-FinFET) and ferroelectric lateral gate-all-around field-effect-transistors (Fe-LGAAFET). Also, Fe-VGAAFET achieves multilayer vertical stacking, which further increases the integrated density of devices. Here, we develop ferroelectric vertical sandwich gate-all-around field-effect-transistors (Fe-VSAFETs) with large memory windows (the maximum 2.3 V), high program/erase speeds (100 ns), and excellent retention properties using a self-aligned high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> metal gate process. Furthermore, vertical nanosheet devices with two channel thicknesses of approximately 16 and 42 nm and nanowire devices with a channel diameter of 30 nm were successfully fabricated, and excellent device characteristics were obtained.