Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO2 gate insulator

Material characteristics and applications of transparent amorphous oxide semiconductors

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Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

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Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

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Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors

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Amorphous IGZO TFT with High Mobility of ∼70 cm²/(V s) via Vertical Dimension Control Using PEALD

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