Nonvolatile Reconfigurable 2D Schottky Barrier Transistors

Abstract

Nonvolatile reconfigurable transistors can be used to implement highly flexible and compact logic circuits with low power consumption in maintaining the configuration. In this paper, we build nonvolatile reconfigurable transistors based on 2D CuInP2S6/MoTe2 heterostructures. The ferroelectric polarization-induced electron and hole doping in the heterostructure are investigated. By introducing the ferroelectric doping into the source/drain contacts, we demonstrate reconfigurable Schottky barrier transistors, whose polarity (n-type or p-type) can be dynamically programmed, where the configuration is nonvolatile in nature. These transistors exhibit a tunable photoresponse, where the n–n doping state leads to negative photocurrent, whereas the p–p doping state gives rise to a positive photocurrent. The transistor with asymmetric (n–p or p–n) contacts exhibits a strong photovoltaic effect. These reconfigurable logic and optoelectronic transistors will enable a new type of device fabric for future computing systems and sensing networks.