IEEE Transactions on Electron Devices · 2021 · 16 citations · 36 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsAtomic Layer DepositionMetal-semiconductor ContactsSemiconductor Device MaterialsBarrier HeightsElectrical PropertiesSchottky Barrier CharacteristicsSchottky Barrier ContactsSchottky Barrier DiodesSchottky BarriersSchottky ContactsTunneling Diodes
We fabricated Zr/p-diamond Schottky barrier diodes (SBDs) with and without a ultrathin atomic layer-deposited Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer. The effects of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer on the electrical properties of devices were investigated using the current–voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}-{V}$ </tex-math></inline-formula> ) and capacitance–voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${C}-{V}$ </tex-math></inline-formula> ) characteristics at room temperature. Compared with Zr/p-diamond SBDs without the interlayer, SBDs with a 2-nm-thick Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> interlayer exhibited higher Schottky barrier height and breakdown voltage. The insertion of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layer effectively reduced the interface state and it is considered that the barrier enhancement is attributed to the significant reduction of interface state density. This work provides a simple method to passivate the diamond surface and modulate the barrier heights of diamond SBDs.
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High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
Jan Isberg, J. Hammersberg, Erik M. J. Johansson et al. · Science · 2002 · 1.3K citations