Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes

Proceedings of SPIE - the International Society for Optical Engineering

M. H. Charlton, Mark Mulligan · 2001 · 1.7K citations

Natural Sciences, Materials Engineering, Materials Science +14

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

Michael J. Uren, Janina Möreke, Martin Kuball · IEEE Transactions on Electron Devices · 2012 · 344 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

“Leaky Dielectric” Model for the Suppression of Dynamic $R_{\mathrm{ON}}$ in Carbon-Doped AlGaN/GaN HEMTs

Michael J. Uren, Serge Karboyan, Indranil Chatterjee et al. · IEEE Transactions on Electron Devices · 2017 · 232 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Michael J. Uren, Marco Silvestri, Markus Cäsar et al. · IEEE Electron Device Letters · 2014 · 126 citations · Full text

Engineering, Electrical Engineering, Materials Science +14

Reliability and failure analysis in power GaN-HEMTs: An overview

Matteo Meneghini, Isabella Rossetto, Carlo De Santi et al. · 2017 · 110 citations

Engineering, Electrical Engineering, Materials Science +16