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The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique

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Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes

H.C. Card, E. H. Rhoderick · Journal of Physics D Applied Physics · 1971 · 1.8K citations

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K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations

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Barrier inhomogeneities at Schottky contacts

J.H. Werner, H. Güttler · Journal of Applied Physics · 1991 · 1.6K citations

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Electron transport at metal-semiconductor interfaces: General theory

R. T. Tung · Physical review. B, Condensed matter · 1992 · 1.5K citations

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