Position-controlled remote epitaxy of ZnO for mass-transfer of as-deployed semiconductor microarrays

Abstract

We report the site-selective remote epitaxial growth of mechanically transferable ZnO microrod (MR) and microdisk (MD) arrays via hydrothermal growth. To designate the growth sites, a hole-patterned poly(methyl methacrylate) mask layer is formed on the graphene-coated GaN substrate. ZnO microarrays are exclusively grown to be either MR or MD on graphene-exposed patterned areas via the remote epitaxy. The remote heteroepitaxial relation between ZnO and GaN across graphene is observed by atomic resolution scanning transmission electron microscopy. The non-covalent remote epitaxial interface allows the mechanical lift-off of the ZnO microarrays and mass-transfer onto a surface of interest using a sticky tape as those arrays are well maintained. The donor substrate is refurbished for repetitive position-controlled remote epitaxy. This study provides a simple method of fabricating mass-transferable microarrays of semiconductors that can maintain the addressable spatial arrays of semiconductors to an arbitrary receiver substrate for ease of heterogeneous integration without an additional assembly process for position control.