Polycrystalline diamond growth on β-Ga₂O₃ for thermal management

Abstract

Abstract We report polycrystalline diamond epitaxial growth on β -Ga 2 O 3 for device-level thermal management. We focused on establishing diamond growth conditions on β -Ga 2 O 3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β -Ga 2 O 3 , a diamond thermal conductivity of 110 ± 33 W m −1 K −1 and a diamond/ β -Ga 2 O 3 thermal boundary resistance of 30.2 ± 1.8 m 2 K G −1 W −1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β -Ga 2 O 3 electronic devices.