Publication | Closed Access
Growth and characterization of Sc-doped EuO thin films
295
Citations
26
References
2014
Year
Materials ScienceEngineeringNanoelectronicsOxide ElectronicsSurface ScienceApplied PhysicsGallium OxideLanthanide-doped EuoSc-doped Euo SamplesChemistryThin FilmsMolecular Beam EpitaxyEpitaxial GrowthThin Film Processing
The preparation of 3d-transition metal-doped EuO thin films by molecular beam epitaxy is investigated using the example of Sc doping. The Sc-doped EuO samples display a good crystalline structure, despite the relatively small ionic radius of the dopant. The Sc doping leads to an enhancement of the Curie temperature to up to 125 K, remarkably similar to previous observations on lanthanide-doped EuO.
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