Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node - Concepedia

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Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node

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2011

Year

Chang, Guillorn, Solomon Solomon, Chien‐Chung Lin, Engelmann, Pyzyna, Ott, Haensch

Symposium on VLSI Technology

Technology NodeElectrical EngineeringEngineeringPhysicsTechnology ScalingNanoelectronicsSoi FinfetsSemiconductor Device FabricationSilicon On InsulatorMicroelectronicsSemiconductor Device

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