First Demonstration of Ultrafast Laser Annealed Monolithic 3D Gate-All-Around CMOS Logic and FeFET Memory with Near-Memory-Computing Macro

Abstract

For the first time, ultrafast laser annealed BEOL gate-all-around (GAA) transistor and FeFET memory were demonstrated with monolithic 3D near-memory-computing (NMC) circuit. The GAA MOSFETs employing ultrafast picosecond visible laser dopant activation exhibit record-high Ion (nFETs=407 uA/um, pFETs=345 uA/um). The BEOL FeFETs memory exhibits large memory window ΔV <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> = 1.2V, more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> cycle endurance. Moreover, the 3D stackability of the GAA MOSFETs and FeFET memory bit cell enable reduces the area of the NMC circuitry and improve the readout throughput.