Yen-Hsiang Huang

16.1 A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices

Cheng-Xin Xue, Je-Min Hung, Hui-Yao Kao et al. · 2021 · 176 citations

Engineering, Computer Engineering, Computer Science +14

An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices

Je-Min Hung, Yen-Hsiang Huang, Sheng-Po Huang et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 120 citations

Computing, Computer Engineering, Computer Science +15

Electrochemical removal of indium ions from aqueous solution using iron electrodes

Wei‐Lung Chou, Yen-Hsiang Huang · Journal of Hazardous Materials · 2009 · 112 citations

Natural Sciences, Chemical Engineering, Chemistry +15

A four-megabit compute-in-memory macro with eight-bit precision based on CMOS and resistive random-access memory for AI edge devices

Je-Min Hung, Cheng-Xin Xue, Hui-Yao Kao et al. · Nature Electronics · 2021 · 112 citations

Computing, Computer Engineering, Computer Science +15

8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices

Je-Min Hung, Tai-Hao Wen, Yen-Hsiang Huang et al. · IEEE Journal of Solid-State Circuits · 2022 · 61 citations

Engineering, Computer Engineering, Computer Science +13