Energy band adjustment of 808 nm GaAs laser power converters via gradient doping

Abstract

Abstract The gradient doping regions were employed in the emitter layer and the base layer of GaAs based laser power converters (LPCs). Silvaco TCAD was used to numerically simulate the linear gradient doping and exponential gradient doping structure, and analyze the transport process of photogenerated carriers. Energy band adjustment via gradient doping improved the separation and transport efficiency of photogenerated carriers and reduced the total recombination rate of GaAs LPCs. Compared with traditional structure of LPCs, the photoelectric conversion efficiency of LPCs with linear and exponential gradient doping structure were improved from 52.7% to 57.2% and 57.7%, respectively, under 808 nm laser light at the power density of 1 W/cm 2 .