Epitaxial growth of polarization-graded AlGaN-based solar-blind ultraviolet photodetectors on pre-grown AlN templates

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

S. R. Lee, A. M. West, Andrew A. Allerman et al. · Applied Physics Letters · 2005 · 291 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-brightness polarized light-emitting diodes

Elison Matioli, Stuart Brinkley, Kathryn M. Kelchner et al. · Light Science & Applications · 2012 · 244 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

Shibin Li, Morgan E. Ware, Jiang Wu et al. · Applied Physics Letters · 2012 · 129 citations

Engineering, Materials Engineering, Materials Science +15

Electrically driven, phosphor-free, white light-emitting diodes using gallium nitride-based double concentric truncated pyramid structures

Seung-Hyuk Lim, Young-Ho Ko, Christophe Rodriguez et al. · Light Science & Applications · 2016 · 89 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

Al- and N-polar AlN layers grown on c-plane sapphire substrates by modified flow-modulation MOCVD

M. Takeuchi, Hiroshi Shimizu, Ryo Kajitani et al. · Journal of Crystal Growth · 2007 · 76 citations

Natural Sciences, Materials Engineering, Materials Science +14