Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers

Abstract

Synaptic operations of all-oxide based charge-trap oxide synapse TFTs using dual-gate configuration (DG CTOx-STFTs) were demonstrated. Short-term plasticity of biological synapses were successfully mimicked by paired-pulse facilitation. Furthermore, by adopting an incremental step potentiation pulse scheme, the amount of detrapped charge could be calculated from the gradually modulated channel conductance. The multi-valued assigned states exhibit stable long-term plasticity characteristics. The introduction of DG configuration was found to be a good solution to effectively control the CTOx-STFTs.