Myunghoon Kwak

HfZrO_{<italic>x</italic>}-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

Seungyeol Oh, Taeho Kim, Myunghoon Kwak et al. · IEEE Electron Device Letters · 2017 · 270 citations

Engineering, Electrical Engineering, Materials Science +13

TiO_{<italic>x</italic>}-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

Jaesung Park, Myunghoon Kwak, Kibong Moon et al. · IEEE Electron Device Letters · 2016 · 215 citations

Engineering, Materials Engineering, Materials Science +14

Impact of electrolyte density on synaptic characteristics of oxygen-based ionic synaptic transistor

Chuljun Lee, Wooseok Choi, Myunghoon Kwak et al. · Applied Physics Letters · 2021 · 30 citations

Engineering, Materials Engineering, Materials Science +13

Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes

Jaesung Park, Chuljun Lee, Myunghoon Kwak et al. · Nanotechnology · 2019 · 27 citations

Engineering, Materials Engineering, Materials Science +13

Investigation of $I-V$ Linearity in TaO_x-Based RRAM Devices for Neuromorphic Applications

Changhyuck Sung, Andrea Padovani, Bastien Beltrando et al. · IEEE Journal of the Electron Devices Society · 2019 · 22 citations · Full text

Engineering, Electrical Engineering, Materials Science +15