Hyun-Joo Ryoo

Influence of Reduction in Effective Channel Length on Device Operations of In-Ga-Zn-O Thin-Film Transistors With Variations in Channel Compositions

Soo-Hyun Bae, Hyun-Joo Ryoo, Jong‐Heon Yang et al. · IEEE Transactions on Electron Devices · 2021 · 31 citations

Oxide Tfts, Engineering, Integrated Circuits +16

Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO ₂ gate insulator

Hyun-Joo Ryoo, Nak-Jin Seong, Kyu-Jeong Choi et al. · Nanotechnology · 2020 · 27 citations

Device Characterization of Nanoscale Vertical-Channel Transistors Implemented with a Mesa-Shaped SiO₂ Spacer and an In–Ga–Zn–O Active Channel

Hyun-Joo Ryoo, Hyun-Min Ahn, Nak‐Jin Seong et al. · ACS Applied Electronic Materials · 2021 · 24 citations

Sound Transistor Operation, Engineering, Integrated Circuits +19

Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers

Hyun-Joo Ryoo, Sung‐Min Yoon · IEEE Electron Device Letters · 2020 · 14 citations

Engineering, Synaptic Transmission, Short-term Plasticity +16