Improved performance of AlGaN/GaN HEMT based H+ sensors by surface hydroxylation treatment

Thirty years of ISFETOLOGY

P. Bergveld · Sensors and Actuators B Chemical · 2002 · 1.6K citations · Full text

Health Professions, Health Sciences, Nature Of Science +1

Site-binding model of the electrical double layer at the oxide/water interface

David E. Yates, S. Levine, Thomas W. Healy · Journal of the Chemical Society Faraday Transactions 1 Physical Chemistry in Condensed Phases · 1974 · 1.3K citations

Natural Sciences, Chemistry, Materials Science +17

Operation of chemically sensitive field-effect sensors as a function of the insulator-electrolyte interface

Luc Bousse, Ν. F. de Rooij, P. Bergveld · IEEE Transactions on Electron Devices · 1983 · 573 citations

Natural Sciences, Chemistry, Electrical Engineering +17

Recent advances in wide bandgap semiconductor biological and gas sensors

S. J. Pearton, F. Ren, Yu‐Lin Wang et al. · Progress in Materials Science · 2009 · 286 citations

Engineering, Materials Engineering, Materials Science +16

<i>p</i>H response of GaN surfaces and its application for <i>p</i>H-sensitive field-effect transistors

Gustav Steinhoff, Martin Hermann, W. J. Schaff et al. · Applied Physics Letters · 2003 · 284 citations

Engineering, Materials Engineering, Materials Science +17