High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Abstract

Trisilylamine homolog, tris(disilanyl)amine (TDSA), is introduced as a novel precursor for the deposition of highly etch resistant silicon nitride thin films having a high growth rate at a low temperature (<300 °C) using plasma enhanced ALD process.