Life-time degradation of STT-MRAM by self-heating effect with TDDB model

Advances and Future Prospects of Spin-Transfer Torque Random Access Memory

E. Chen, Dmytro Apalkov, Zhuo Diao et al. · IEEE Transactions on Magnetics · 2010 · 388 citations

Engineering, Electrical Engineering, Materials Science +17

Modeling and characterization of gate oxide reliability

J.C. Lee, Ih-Chin Chen, Hu Chenming · IEEE Transactions on Electron Devices · 1988 · 370 citations

Engineering, Electrical Engineering, Materials Science +17

45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell

Chrong Jung Lin, Sangmo Kang, Y.J. Wang et al. · 2009 · 322 citations

Engineering, Computer Engineering, Electrical Engineering +17

A Study on Practically Unlimited Endurance of STT-MRAM

Jimmy J. Kan, Chando Park, Chi Ching et al. · IEEE Transactions on Electron Devices · 2017 · 105 citations

Engineering, Electrical Engineering, Materials Science +17

A technology-agnostic MTJ SPICE model with user-defined dimensions for STT-MRAM scalability studies

Jong Yeon Kim, An Chen, Behtash Behin‐Aein et al. · 2015 · 95 citations

Engineering, Electrical Engineering, Materials Science +15