Impact of growth conditions on intrinsic carbon doping in GaN layers and its effect on blue and yellow luminescence

First-principles calculations for defects and impurities: Applications to III-nitrides

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Luminescence properties of defects in GaN

M. A. Reshchikov, H. Morkoç̌ · Journal of Applied Physics · 2005 · 1.9K citations

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Universal alignment of hydrogen levels in semiconductors, insulators and solutions

Chris G. Van de Walle, Jörg Neugebauer · Nature · 2003 · 1.2K citations

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Gallium vacancies and the yellow luminescence in GaN

Jörg Neugebauer, Chris G. Van de Walle · Applied Physics Letters · 1996 · 1.1K citations

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Mechanism of Yellow Luminescence in GaN

T. Ogino, Masaharu Aoki · Japanese Journal of Applied Physics · 1980 · 684 citations

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