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High-NA EUV lithography optics becomes reality
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2020
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Optical MaterialsEngineeringElectron-beam LithographyMicroscopyOptic DesignOptical TestingHigh Na OpticsBeam LithographyFirst MirrorsOptical PropertiesComputational ImagingInstrumentationOptical SystemsRadiation ImagingZeiss Starlith®3400 OpticsPhysicsOphthalmologyComputer EngineeringFreeform OpticComputational Optical ImagingAdaptive OpticApplied PhysicsMedicineOptoelectronics
For each lithography scanner the optics is a key component. While the NXE:3400 with ZEISS Starlith®3400 optics at Numerical Aperture of 0.33 is entering high-volume manufacturing in customer factories, we are developing high NA optics with a Numerical Aperture of 0.55. This optics consists of a highly flexible illumination system and a projection optics enabling single-exposure sub 8nm half-pitch resolution. In this paper, we give an overview of the progress of ZEISS High-NA EUV program where production of first mirrors and frames has already been started.