Analysis of dominant non-radiative recombination mechanisms in InGaN green LEDs grown on silicon substrates

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W. Shockley, W. T. Read · Physical Review · 1952 · 6.3K citations

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GaN-on-Si Power Technology: Devices and Applications

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Origin of efficiency droop in GaN-based light-emitting diodes

Minho Kim, M. Schubert, Qi Dai et al. · Applied Physics Letters · 2007 · 1.3K citations · Full text

Polarization Fields, Photonics, Electrical Engineering +13

Efficiency droop in nitride‐based light‐emitting diodes

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Photonics, Electrical Engineering, Solid-state Lighting +12

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

Justin Iveland, Lucio Martinelli, Jacques Peretti et al. · Physical Review Letters · 2013 · 657 citations · Full text

Engineering, Electron Optic, Electrical Injection +21