Development and Verification of Protection Circuit for Hard Switching Fault of SiC MOSFET by Using Gate-Source Voltage and Gate Charge

Abstract

This paper describes a protection circuit for SiC MOSFETs from hard switching faults(HSF). The proposed protection circuit monitors not only the gate-source voltage but also the amount of gate charge. There are great benefits of this method like high speed protection and not requiring additional current sensing cells and terminals. In this paper, it was verified experimentally that the proposed circuit can protect HSF at not only room temperature but also high temperature and does not erroneous detect during synchronous rectification.