Gate-source Voltage Control

Gate-Source Voltage Control is a gate drive circuit technique that regulates the voltage difference between the gate and source terminals of a power semiconductor device to ensure precise switching behavior, minimizing conduction and switching losses while maintaining device reliability.

59

Publications

2.9K

Citations

218

Authors

85

Institutions

Publications per year

2017–2026

10

Authors

218

  1. HS
    Henry Shu-Hung Chung

    City University of Hong Kong, Hong Kong SAR China

    4 publications · 220 citations

    4

    h-index

  2. JW
    Jianjing Wang

    University of Bristol, United Kingdom

    2 publications · 136 citations

    2

    h-index

  3. JT
    J.P. Tero

    Delft University of Technology, Netherlands

    2 publications · 82 citations

    2

    h-index

  4. HH
    Hideto Hidaka

    Renesas Electronics (Japan), Japan

    2 publications · 42 citations

    2

    h-index

  5. RH
    Ron Hogervorst

    Delft University of Technology, Netherlands

    2 publications · 82 citations

    2

    h-index

1–5 of 218

Venues

  1. IEEE Transactions on Power Electronics

    5 publications · 362 citations

    5

    h-index

  2. IEEE Journal of Solid-State Circuits

    3 publications · 728 citations

    3

    h-index

  3. Applied Physics Letters

    2 publications · 130 citations

    2

    h-index

  4. IEEE Transactions on Industrial Electronics

    2 publications · 89 citations

    2

    h-index

  5. IEEE Electron Device Letters

    2 publications · 94 citations

    2

    h-index

1–5