Tadahiro Imada

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

Masahito Kanamura, Toshihiro Ohki, T. Kikkawa et al. · IEEE Electron Device Letters · 2010 · 292 citations

Wide-bandgap Semiconductor, Gate Dielectrics, Electrical Engineering +8

Organic light-emitting diodes driven by pentacene-based thin-film transistors

M. Kitamura, Tadahiro Imada, Yasuhiko Arakawa · Applied Physics Letters · 2003 · 113 citations

White Oled, Electrical Engineering, Thin-film Transistor +15

MIT virtual source GaNFET‐high voltage (MVSG‐HV) model: A physics based compact model for HV‐GaN HEMTs

Ujwal Radhakrishna, Tadahiro Imada, Tomás Palacios et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2014 · 62 citations

Device Modeling, Electrical Engineering, Compact Model +12

Time-of-Flight Measurement of Lateral Carrier Mobility in Organic Thin Films

M. Kitamura, Tadahiro Imada, Satoshi Kako et al. · Japanese Journal of Applied Physics · 2004 · 47 citations

Engineering, Organic Electronics, Thin Film Process Technology +19

Enhancement-mode GaN MIS-HEMTs for power supplies

Tadahiro Imada, Masahito Kanamura, T. Kikkawa · 2010 · 40 citations

Electrical Engineering, Engineering, Gan Hemt +12