Takeshi Horiguchi

A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs

Takeshi Horiguchi, Shin-ichi Kinouchi, Yasushi Nakayama et al. · 2015 · 69 citations

Electrical Engineering, Semiconductor Device, Engineering +12

An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

Yasushige Mukunoki, Kentaro Konno, Tsubasa Matsuo et al. · IEEE Transactions on Power Electronics · 2018 · 55 citations

Sic-mosfet S., Engineering, Power Electronics Converter +16

Modeling of a Silicon-Carbide MOSFET With Focus on Internal Stray Capacitances and Inductances, and Its Verification

Yasushige Mukunoki, Yuta Nakamura, Kentaro Konno et al. · IEEE Transactions on Industry Applications · 2018 · 42 citations

Device Modeling, Electrical Engineering, Internal Stray Capacitances +13

Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET

Yasushige Mukunoki, Yuta Nakamura, Takeshi Horiguchi et al. · IEEE Transactions on Electron Devices · 2016 · 33 citations

Device Modeling, Electrical Engineering, Semiconductor Device +12

A short circuit protection method based on a gate charge characteristic

Takeshi Horiguchi, Shin-ichi Kinouchi, Yasushi Nakayama et al. · 2014 · 24 citations

Hardware Security, High-speed Circuit, Electrical Engineering +13