Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET

Abstract

This paper describes a novel compact model for a SiC-MOSFET. The model is useful to achieve accurate simulation of output characteristics from a linear region to a saturation region, selecting both gate-source voltage and temperature as parameters. In order to construct the model systematically, attention is paid to a physics-based modeling procedure with channel mobility as an adjustable parameter. The model also features characterization and modeling of an internal drain-gate capacitor. The model shows fairly good agreement in the output characteristics and the dynamic behavior of both gate drive circuit and main power circuits between the experimental and simulated results. This successful validation indicates that this model offers a promising circuit-based simulation tool for designing whole power conversion systems using SiC-MOSFETs.