Shin-ichi Kinouchi - Concepedia

Author

Shin-ichi Kinouchi

Tokyo Institute of Technology

Also Known As

Shin-Ichi Kinouchi, Shin-ichi Kinouchi, Shinichi Kinouchi, Shin‐Ichi Kinouchi

Publications

490

Citations

H-Index

Concepts

All Affiliations

Tokyo Institute of Technology Mitsubishi Electric (Japan)Kanazawa Institute of Technology Mitsubishi Group (Japan)Mitsubishi Electric (Germany)

About

Shin-ichi Kinouchi is an author at Tokyo Institute of Technology specializing in power electronics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	7	7	388
2	Electrical Engineering	7	7	388
3	Computer Engineering	3	3	112
4	Microelectronics	3	3	121
5	Power Electronic Devices	1	1	24

Shin-ichi Kinouchi

Publications

424

Citations

H-Index

Page 1

	Year	Citations
Power-Loss Breakdown of a 750-V 100-kW 20-kHz Bidirectional Isolated DC–DC Converter Using SiC-MOSFET/SBD Dual Modules Hirofumi Akagi, T. Yamagishi, Nadia M. L. Tan, IEEE Transactions on Industry Applications Sic ModulesElectrical EngineeringEngineeringPower DeviceDual-active-bridge Dc-dc Converter	2014	131
Bidirectional Isolated Dual-Active-Bridge (DAB) DC-DC Converters Using 1.2-kV 400-A SiC-MOSFET Dual Modules Hirofumi Akagi, Shin-ichi Kinouchi, Yuji Miyazaki CPSS Transactions on Power Electronics and Applications Electrical EngineeringEngineeringPower DeviceBidirectional Isolated Dual-active-bridgePower Electronics Converter	2016	82
A fast short-circuit protection method using gate charge characteristics of SiC MOSFETs Takeshi Horiguchi, Shin-ichi Kinouchi, Yasushi Nakayama, Electrical EngineeringSemiconductor DeviceEngineeringPower DeviceBias Temperature Instability	2015	69
Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET Yasushige Mukunoki, Yuta Nakamura, Takeshi Horiguchi, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringPower Device	2016	33
Power-loss breakdown of a 750-V, 100-kW, 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules Hirofumi Akagi, T. Yamagishi, Nadia M. L. Tan, Sic ModulesElectrical EngineeringEngineeringSic-mosfet/sbd Dual ModulesPower Device	2014	30
A 750-V, 100-kW, 20-kHz Bidirectional Isolated DC/DC Converter Using SiC-MOSFET/SBD Modules T. Yamagishi, Hirofumi Akagi, Shin-ichi Kinouchi, IEEJ Transactions on Industry Applications	2014	25
A short circuit protection method based on a gate charge characteristic Takeshi Horiguchi, Shin-ichi Kinouchi, Yasushi Nakayama, Hardware SecurityHigh-speed CircuitElectrical EngineeringEngineeringPower Device	2014	24
A High-Speed Protection Circuit for IGBTs Subjected to Hard-Switching Faults Takeshi Horiguchi, Shin-ichi Kinouchi, Yasushi Nakayama, IEEE Transactions on Industry Applications Electrical EngineeringEngineeringHardware ReliabilityPower DeviceBias Temperature Instability	2014	19
Modeling of IGBTs with focus on voltage dependency of terminal capacitances S. Tominaga, Hiroaki Urushibata, Hideaki Fujita, European Conference on Power Electronics and Applications	2011	11

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