Effect of post-deposition annealing on atomic layer deposited SiO2 film for silicon surface passivation

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Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics

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On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

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Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

G. Dingemans, W. Beyer, M. C. M. van de Sanden et al. · Applied Physics Letters · 2010 · 178 citations · Full text

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