Concepedia

Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state

Zahabul Islam, Angela L. Paoletta, Anthony M. Monterrosa, Jennifer D. Schuler, Timothy J. Rupert, Khalid Hattar, Nicholas R. Glavin, Aman Haque

Microelectronics Reliability · 2019 · 53 citations · 35 references

Open access

Concepts

EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ReliabilityRadiation Damage In MaterialsSemiconductor ReliabilityWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsHigh-electron-mobility TransistorsIrradiation EffectsRadiation Effects

References

35

Quantitative measurement of displacement and strain fields from HREM micrographs

Martin Hÿtch, E. Snoeck, R. Kilaas · Ultramicroscopy · 1998 · 2.7K citations

Engineering, Biophysics, Materials Engineering +14

GaN HEMT reliability

Jesús A. del Alamo, Jungwoo Joh · Microelectronics Reliability · 2009 · 483 citations

Defect Donor and Acceptor in GaN

D. C. Look, D. C. Reynolds, J. W. Hemsky et al. · Physical Review Letters · 1997 · 430 citations

Engineering, Materials Engineering, Materials Science +17

Review—Ionizing Radiation Damage Effects on GaN Devices

S. J. Pearton, F. Ren, Erin Patrick et al. · ECS Journal of Solid State Science and Technology · 2015 · 370 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Observation of the One-Dimensional Diffusion of Nanometer-Sized Dislocation Loops

Kazuto Arakawa, K. Ono, M. Isshiki et al. · Science · 2007 · 351 citations

Natural Sciences, Materials Science, Physics +16