Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain Switching

Abstract

We demonstrated that the 2.5nm-thick HfAIO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> N-type NCFET based on defect-passivated multidomain switching can achieve a minimum 9 mV/dec subthreshold swing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(SS)$</tex> , a negligible hysteresis of 1mV, an ultralow <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{off}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$135\ \text{fA}/\mu \text{m}$</tex> , a large <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$I_{on}/I_{0ff}$</tex> ratio of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$8.7\times 10^{7}$</tex> and a sub-60 mV/dec SS over 5 decade. For P-type NCFET, the non-hysteretic steep-slope switch is still reached under the synergistic effect of gate stress, defect passivation and doping engineering. The Al doping and defect passivation play the key role for reducing trap-related leakage, enhancing NC, and stabilizing multidomain switching. The highly scaled HfAIO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> CMOS NCFET shows the potential for low power logic applications.