Structural Characteristics and Photoluminescence Properties of Sputter-Deposition ZnGa2O4 Thin Films on Sapphire and Si(100) Substrates

Abstract

In this paper, we report the growth and material characteristics of ZnGa2O4 thin films on c-plane sapphire and Si(100) substrates by a radio-frequency magnetron sputtering. When deposited on sapphire, the ZnGa2O4 film showed a polycrystalline nature and a less randomly oriented, primarily with the (111), (222) and (511) planes parallel to the substrate surface. On Si(100), the ZnGa2O4 thin film was randomly oriented with (311)- and (020)-plane polycrystalline properties. Transmission electron microscopy analysis revealed that an amorphous-layer interface was formed on the Si(100) substrate and the microstructure of ZnGa2O4 became disordered. The ZnGa2O4/sapphire emitted ultraviolet photoluminescence and green emissions. The dominant optical transitions depended on the deposition temperature, oxygen and Zn contents, and nature of the substrate. The structural and optical properties of sputter-deposited ZnGa2O4 thin film on sapphire indicated that sapphire substrate is suitable for the growth of crystalline, high-quality ZnGa2O4 thin film.