The Journal of Physical Chemistry C · 2019 · 41 citations · 68 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor MaterialsCarrier TransportDopingMetal Oxide NanomaterialsOxide SemiconductorsSemiconductor NanomaterialsSemiconductor PhysicsBand GapCharge Carrier DensityCharge Carrier MobilityCharge TrapsElectron MobilityInterstitial DopingNative DefectsPhotoluminescence
An innovative procedure is presented, when for the first time, yttrium-doped ZnO vertically aligned nanorods (NRs) have been synthesized using a unique rapid microwave-assisted method. In comparison with pristine ZnO NRs, the Y-doped samples present a more favorable morphology along with reduced crystallinity because of substitutional defects, YZn. Y acted as a shallow donor-type defect, leading to an 80% increase in dopant density, to 1.36 × 1018 cm–2 in the 0.15% Y sample. The transmission line model was used to analyze the transport properties. It was found that a 1000-fold increase in conductivity and electron mobility was achieved by doping 0.15% Y, resulting in a high density of donors which fill charge traps. Meanwhile, a significant improvement in conductivity was accompanied by greater electron hole recombination and band gap reduction. The analysis of photoluminescence spectra reveals the effect of Y doping on native point defects, initially reducing Zn2+ vacancies by filling with YZn, followed by the reduction of O2– vacancies with interstitial doping at higher Y concentration. With a fine balance of superior conductivity and charge recombination rate, the photocatalytic water splitting performance was optimized, achieving a photocurrent of 0.84 mA cm–2 at 1.23 VRHE with 0.1% Y doping. This corresponded to a 47% enhancement in photoconversion efficiency compared to the pristine sample.
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