Growth and characterization of In Ga1−N (0 < x < 0.16) templates for controlled emissions from MQW

Auger recombination in InGaN measured by photoluminescence

Yinchu Shen, Gerd Mueller, Satoshi Watanabe et al. · Applied Physics Letters · 2007 · 1.1K citations

Semiconductors, Photonics, Electrical Engineering +12

Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim et al. · Applied Physics Letters · 2007 · 389 citations · Full text

Wide-bandgap Semiconductor, Engineering, Nanoelectronics +20

Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping

S. Pereira, M. R. Correia, E. Pereira et al. · Applied Physics Letters · 2002 · 236 citations

Wide-bandgap Semiconductor, Engineering, Strain Gradients +17

InGaN Light-Emitting Diodes on<i>c</i>-Face Sapphire Substrates in Green Gap Spectral Range

S. Saito, Rei Hashimoto, J. I. Hwang et al. · Applied Physics Express · 2013 · 167 citations

White Oled, Photonics, Electrical Engineering +15

Indium-induced changes in GaN(0001) surface morphology

John E. Northrup, Jörg Neugebauer · Physical review. B, Condensed matter · 1999 · 158 citations · Full text

Materials Science, Wide-bandgap Semiconductor, In-terminated Gan +13