Higher performance optoelectronic devices with In0.21Al0.21Ga0.58As/In0.15Ga0.85As capping of III-V quantum dots

1.3 μm room-temperature GaAs-based quantum-dot laser

Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 758 citations

Categoryquantum Electronics, Quantum Photonics, Engineering +19

nextnano: General Purpose 3-D Simulations

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Engineering, 3D Modeling, Simulation +20

Engineered quantum dot single-photon sources

Reports on Progress in Physics · 2012 · 386 citations · Full text

Quantum dot optoelectronic devices: lasers, photodetectors and solar cells

Jiang Wu, Siming Chen, A.J. Seeds et al. · Journal of Physics D Applied Physics · 2015 · 214 citations · Full text

Quantum Photonics, Optical Materials, Engineering +20

Source and elimination of oval defects on GaAs films grown by molecular beam epitaxy

Young G. Chai, Robert H. Chow · Applied Physics Letters · 1981 · 94 citations

Materials Engineering, Electrical Engineering, Epitaxial Growth +10