Concepedia

Author

Binita Tongbram

Indian Institute of Technology BombayORCID

Also Known As

B. TONGBRAM, B. Tongbram, Binita Tongbram, Tongbram, Binita

54

Publications

458

Citations

14

H-Index

26

Concepts

All Affiliations

Indian Institute of Technology BombayS.N. Bose National Centre for Basic Sciences
BT

About

Binita Tongbram is an author at Indian Institute of Technology Bombay specializing in applied physics, engineering, and physics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

14

18

311

2

Applied Physics

14

18

311

3

Electrical Engineering

5

5

80

4

Materials Science

3

3

48

5

Natural Sciences

1

1

10

Binita Tongbram

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21

Publications

342

Citations

14

H-Index

YearCitations

Improved near infrared energy harvesting through heterogeneously coupled SK on SML quantum dot heterostructure

Debabrata Das, Debiprasad Panda, Binita Tongbram,

Solar Energy Materials and Solar Cells

2018

30

Ultranarrow spectral response of InGaAs QDIPs through the optimization of strain-coupled stacks and capping layer composition

Debiprasad Panda, Akshay Balgarkashi, Saikalash Shetty,

Materials Science in Semiconductor Processing

2017

28

The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layers

Smitha Shetty, Sourav Adhikary, Binita Tongbram,

Journal of Luminescence

2014

24

The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures

Debabrata Das, Hemant Ghadi, Binita Tongbram,

Journal of Luminescence

2017

21

Evidence of quantum dot size uniformity in strain-coupled multilayered In(Ga)As/GaAs QDs grown with constant overgrowth percentage

Debiprasad Panda, Aijaz Ahmad, Hemant Ghadi,

Journal of Luminescence

2017

19

Analytical modeling of temperature and power dependent photoluminescence (PL) spectra of InAs/GaAs quantum dots

Indranil Mal, Debiprasad Panda, Binita Tongbram,

Journal of Applied Physics

2018

18

Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors

Binita Tongbram, Smitha Shetty, Hemant Ghadi,

Applied Physics A

2014

17

Impact of vertical inter-QDs spacing correlation with the strain energy in a coupled bilayer quantum dot heterostructure

Binita Tongbram, Arjun Mandal, Saumya Sengupta,

Journal of Alloys and Compounds

2017

17

Impact of an In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>As Capping Layer in Impeding Indium Desorption from Vertically Coupled InAs/GaAs Quantum Dot Interfaces

Binita Tongbram, Saumya Sengupta, Subhananda Chakrabarti

ACS Applied Nano Materials

2018

17

Higher performance optoelectronic devices with In0.21Al0.21Ga0.58As/In0.15Ga0.85As capping of III-V quantum dots

Jhuma Saha, Debiprasad Panda, Binita Tongbram,

Journal of Luminescence

2019

16

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