Journal of Physics D Applied Physics · 2015 · 219 citations · 307 references
EngineeringElectrical EngineeringMaterials ScienceNanomaterialsOptoelectronicsSemiconductor DevicesOptoelectronic DevicesPhotodetectorsQuantum ConfinementQuantum DotsSemiconductor NanomaterialsSolar CellsOptoelectronic PropertiesQuantum Confinement EffectsQuantum Dot DevicesQuantum Dot LasersQuantum Dot MaterialsQuantum Dot Solar CellsQuantum Optoelectronic DevicesSemiconductor Quantum Dots
Nanometre-scale semiconductor devices have been envisioned as next-generation technologies with high integration and functionality. Quantum dots, or the so-called 'artificial atoms', exhibit unique properties due to their quantum confinement in all 3D. These unique properties have brought to light the great potential of quantum dots in optoelectronic applications. Numerous efforts worldwide have been devoted to these promising nanomaterials for next-generation optoelectronic devices, such as lasers, photodetectors, amplifiers, and solar cells, with the emphasis on improving performance and functionality. Through the development in optoelectronic devices based on quantum dots over the last two decades, quantum dot devices with exceptional performance surpassing previous devices are evidenced. This review describes recent developments in quantum dot optoelectronic devices over the last few years. The paper will highlight the major progress made in 1.3 μm quantum dot lasers, quantum dot infrared photodetectors, and quantum dot solar cells.
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Plasmonics for improved photovoltaic devices
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