Ligand hyperfine interactions at silicon vacancies in 4H-SiC

<i>Electron Paramagnetic Resonance: Elementary Theory and Practical Applications</i>

John A. Weil, James R. Bolton, John E. Wertz et al. · Physics Today · 1995 · 1K citations

Natural Sciences, Chemistry, Physics +17

Atomic parameters for paramagnetic resonance data

J. R. Morton, K. F. Preston · Journal of Magnetic Resonance (1969) · 1978 · 874 citations

Natural Sciences, Chemistry, Physics +14

Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann, Sang‐Yun Lee, Torsten Rendler et al. · Nature Materials · 2014 · 659 citations · Full text

Natural Sciences, Materials Science, Physics +15

Silicon vacancy related defect in 4H and 6H SiC

E. Sörman, Nguyên Tiên Són, Weimin Chen et al. · Physical review. B, Condensed matter · 2000 · 258 citations

Engineering, Materials Engineering, Materials Science +17

Room-temperature quantum microwave emitters based on spin defects in silicon carbide

Hannes Kraus, V. A. Soltamov, Daniel Riedel et al. · Nature Physics · 2013 · 252 citations

Engineering, Electrical Engineering, Physics +16