Pontus Stenberg

Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC

Nguyên Tiên Són, Pontus Stenberg, Valdas Jokubavičius et al. · Applied Physics Letters · 2019 · 24 citations · Full text

Natural Sciences, Materials Science, Physics +16

Ligand hyperfine interactions at silicon vacancies in 4H-SiC

Nguyên Tiên Són, Pontus Stenberg, Valdas Jokubavičius et al. · Journal of Physics Condensed Matter · 2019 · 20 citations · Full text

Natural Sciences, Materials Science, Physics +13

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

Pontus Stenberg, Pitsiri Sukkaew, Ildikó Farkas et al. · The Journal of Physical Chemistry C · 2017 · 17 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure <sup>28</sup>Si<sup>12</sup>C, Natural and <sup>13</sup>C – Enriched 4H-SiC

Ivan G. Ivanov, Milan Yazdanfar, Björn Lundqvist et al. · Materials science forum · 2014 · 12 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF₄ as Si precursor

Pontus Stenberg, Örjan Danielsson, Edvin Erdtman et al. · Journal of Materials Chemistry C · 2017 · 10 citations · Full text

Natural Sciences, Chemistry, Materials Science +17