Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy

Phonon dispersion and Raman scattering in hexagonal GaN and AlN

V. Yu. Davydov, Yu. É. Kitaev, I. N. Goncharuk et al. · Physical review. B, Condensed matter · 1998 · 820 citations

Natural Sciences, Materials Science, Physics +17

GaN based nanorods for solid state lighting

Shufeng Li, A. Waag · Journal of Applied Physics · 2012 · 509 citations

Engineering, Materials Engineering, Materials Science +17

Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)

R. Debnath, R. Meijers, T. Richter et al. · Applied Physics Letters · 2007 · 223 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

E. Calleja, M. A. Sánchez-Garcı́a, F.J. Sánchez et al. · Journal of Crystal Growth · 1999 · 196 citations

Engineering, Materials Engineering, Materials Science +14

Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

L. Lymperakis, Jörg Neugebauer · Physical Review B · 2009 · 183 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17