Model of GaSb-InAs p-i-n Gate All Around BioTunnel FET

Abstract

This paper investigates the role of a hetero-junction p-i-n gate all around tunnel FET architecture for biosensing applications. The device offers a better sensitivity and has been modeled in terms of various parameters such as surface potential, threshold voltage, and drain current. Analytical modeling scheme relates to the exact resultant solution of the two-dimensional Poisson equation. The shift in the threshold voltage has been considered as the sensing parameter to detect the sensitivity when the biomolecules are immobilized in the cavity region.