Applied Physics Letters · 2018 · 10 citations · 17 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsMetal-oxide-semiconductor Field-effect TransistorsPhase TransitionsSemiconductor ReliabilityFin Field-effect TransistorsResistive SwitchingResistive Switching MaterialsSwitching BehaviorSwitching DevicesSwitching PerformanceThreshold Switching MaterialsThreshold Voltage
A Pb(Zr0.52Ti0.48)O3 (PZT) threshold-switching (TS) device with abrupt resistive switching (∼5 to 6 orders) at a threshold voltage of ∼1.1 V and high off-state resistance (approximately 1 × 1010 Ω) is demonstrated. The thermal, productive, and operational reliability of the PZT TS device is investigated. Furthermore, a PZT-based phase transition fin-shaped field-effect-transistor (phase-FinFET) is demonstrated. Compared against a baseline FinFET, the PZT-based phase-FinFET improves the on/off current ratio by a factor of 27.5 and exhibits an extremely abrupt steep-switching characteristic (subthreshold slope of ∼2 mV/decade at 300 K).
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Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations
Natural Sciences, Materials Engineering, Materials Science +12
A steep-slope transistor based on abrupt electronic phase transition
Nikhil Shukla, Arun V. Thathachary, Ashish Agrawal et al. · Nature Communications · 2015 · 375 citations · Full text