IEEE Electron Device Letters · 2018 · 12 citations · 14 references
EngineeringElectrical EngineeringMicroelectromechanical SystemsMicroelectronicsMicrowave EngineeringMems CharacterizationMems DesignMems FabricationMems SwitchesMems TestingRf MemsInsertion LossInsertion Loss MeasurementIntermodulation AnalysisIntermodulation DistortionLinearityRf Mems FabricationRf Mems SwitchesRf Microelectromechanical Systems
Design, fabrication, and measurement of a single-pole-twelve-throw radio frequency (RF) micro-electro-mechanical systems switch are presented in this letter. A switch with specially designed parallel dual-cantilevers is used to improve the RF matching. Pure Au–Au contacts are applied to maintain the low insertion loss and verify the high linearity of the switch. A least square method is introduced to remove the uncertainty from the measurement of the third-order intermodulation intercept point (IIP3). The measurement results show that the insertion loss and isolation of each channel of the switch are better than 0.94 and 30 dB from dc to 8 GHz, respectively. The measured IIP3 of each channel is higher than 60 dBm. The switch works over 1 million cycles under cold-switching condition with 200-mA dc power.
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Spectrum for 5G: Global Status, Challenges, and Enabling Technologies
Juho Lee, Erika Tejedor, Karri Ranta‐aho et al. · IEEE Communications Magazine · 2018 · 263 citations · Full text