Influence of bound hydrogen states on carrier-induced degradation in multi-crystalline silicon

Abstract

In this work, we present new insight into the light and elevated temperature induced degradation (LeTID) by performing isochronal annealing prior to degradation and further investigation on the correlation between LeTID and boron-hydrogen bond concentrations (B-H). Significantly, the maximum LeTID defect density, boron-oxygen regeneration rate and B-H respond similarly with isochronal annealing temperature. This result supports that B-H plays an important role in the formation of LeTID. A new defect model involving atomic hydrogen, B-H and hydrogen dimer is proposed. Finally, a single defect transitioning between two precursor states is proposed to be responsible for the two-step degradation observed in LeTID.