Non-Universal Temperature Dependence of Hot Carrier Degradation (HCD) in FinFET: New Observations and Physical Understandings

Abstract

The temperature dependence of hot carrier degradation (HCD) in FinFET is observed to vary with bias conditions, channel local temperature and degradation time. It is found that the total HCD consist of both contributions from interface traps and oxide traps, whose individual temperature behaviors are different. Therefore, the total HCD composition varies with different conditions causing nonuniversal temperature dependence of HCD. The understandings are helpful for the physical investigation and modeling of HCD in advanced FinFET Technology.