Laser-Based Full Cut Dicing Evaluations for Thin Si Wafers

Abstract

Over the last years, singulation of thin semiconductor wafers with (ultra) low-K top layer has become a challenge in the production process of integrated circuits. The traditional blade dicing process is encountering serious yield issues. These issues can be addressed by applying a laser grooving process prior to the blade dicing, which is the process of reference nowadays. However, as wafers are becoming thinner, this process flow is not providing the yield and cost required. This paper will discuss the results of a study done on several multi beam laser ablation technologies on thin Si wafers and describe the pro's and con's for each of them.