Characterizations of high-voltage vertically-stacked GaAs laser power converter

Abstract

Six-junction vertically-stacked GaAs laser power converters (LPCs) with n+-GaAs/p+-Al0.37Ga0.63As tunnel junctions have been designed and grown by metal-organic chemical vapor deposition for converting the power of 808 nm lasers. The LPC chips are characterized by measuring current–voltage (I–V) characteristics under 808 nm laser illumination, and a maximum conversion efficiency ηc of 53.1% is obtained for LPCs with an aperture diameter of 2 mm at an input laser power of 0.5 W. In addition, the characteristics of the LPCs are analyzed by a standard equivalent-circuit model, and the reverse saturation current, ideality factor, series resistance and shunt resistance are extracted by fitting of the I–V curves.