Detection of edge component of threading dislocations in GaN by Raman spectroscopy

Abstract

We succeeded in measuring the density and direction of the edge component of threading dislocations (TDs) in c-plane (0001) GaN by micro-Raman spectroscopy mapping. In the micro-Raman spectroscopy mapping of the E2H peak shift between 567.85 and 567.75 cm−1, six different contrast images are observed toward directions of . By comparing X-ray topography and etch pit images, the E2H peak shift is observed where the edge component of TDs exists. In contrast, the E2H peak is not observed where the screw component of TDs exists.